III-V compound multi-junction solar cells: present and future
III-V compound multi-junction solar cells: present and future
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DOI：
10.1016/s0927-0248(02)00168-x
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发表时间：
2003-01-01
影响因子：
6.9
通讯作者：
Yamaguchi, M
中科院分区：
文献类型：
--
作者：
Yamaguchi, M
由于顶层电池材料质量的提高，光电低损耗双异质结隧道结的发展，光子和载流子限制，以及有源电池层和衬底之间的晶格匹配，在过去的15年中，III-V化合物多结(MJ)太阳能电池有了很大的改进。本文介绍了日本新阳光工程超高效MJ电池的研发现状。在Ge衬底上，InGaP/InGaAs/Ge单片级联三结电池的最新记录效率为31.7%(AM1.5(1SUN))，而InGaP/GaAs//InGaAs机械叠层三结电池的世界记录效率为33.3%。展望了实现超高效率低成本MJ太阳电池的前景。(C)2002年，爱思唯尔科学公司出版。
As a result of top cell material quality improvement, development of optically and electrically low-loss double-hetero structure tunnel junction, photon and carrier confinements, and lattice-matching between active cell layers and substrate, the last 15 years have seen large improvements in III-V compound multi-junction (MJ) solar cells. In this paper, present status of R&D program for super-high-efficiency MJ cells in the New Sunshine Project in Japan is presented. InGaP/InGaAs/Ge monolithic cascade 3-junction cells with newly recorded efficiency of 31.7% at AM1.5 (1-sun) were achieved on Ge substrates, in addition to InGaP/GaAs//InGaAs mechanically stacked 3-junction cells with world-record efficiency of 33.3%. Future prospects for realizing super-high-efficiency and low-cost MJ solar cells are also discussed. (C) 2002 Published by Elsevier Science B.V.