Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a -Si:H/c -Si and a -SiNx:H/c -Si hetero-interfaces
Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a -Si:H/c -Si and a -SiNx:H/c -Si hetero-interfaces
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湿化学基材预处理对a-Si:H/c-Si和a-SiNx:H/c-Si异质界面电子界面性能和复合损失的影响
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发表时间：
2011
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通讯作者：
M. Schmidt
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作者：
H. Angermann;F. Wünsch;M. Kunst;A. Laades;U. Stürzebecher;E. Conrad;L. Korte;M. Schmidt
研究了不同湿法预清洗工艺和非晶硅（a-Si:H）或氮化硅（a-SiNx:H）沉积后抛光浮子区（FZ）太阳能电池衬底表面电荷、表面态密度和界面复合行为。通过表面光电压（SPV）、微波检测光导衰减（µW-PCD）和瞬态微波传导（TRMC）测量，在制备过程中反复监测电子界面性能。如图所示，在a- si:H/c-Si异质结结构中，正面采用a- sinx:H钝化，背面采用p型a- si:H发射极，在随后的软等离子体增强化学气相沉积a- si:H或a- sinx:H过程中，优化的湿化学预处理效果可以得到保留。这导致了低界面复合速度的异质界面。这些结果与先前报道的结果进行了比较，这些发现是在纹理CZ单晶衬底上获得的。已知a- sinx:H会导致场效应钝化。然而，在平面和织构的a- sinx:H/c-Si界面上，湿化学处理对表面电荷和复合损失都有很强的影响。（©2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
Surface charge, surface state density and interface recombination behavior on polished float zone (FZ) solar cell substrates were investigated after various wet-chemical pre-cleaning procedures and deposition of amorphous silicon (a-Si:H) or silicon nitride (a-SiNx:H). Applying surface photo voltage (SPV), microwave detected photo conductance decay (µW-PCD) and transient microwave conduction (TRMC) measurements, electronic interface properties were monitored repeatedly during the preparation processes. As shown for an inverted a-Si:H/c-Si hetero-junction structure, with front side passivation by a-SiNx:H and a p-type a-Si:H emitter on the rear side, the effect of optimised wet-chemical pre-treatment can be preserved during the subsequent soft plasma enhanced chemical vapour deposition of a-Si:H or a-SiNx:H. This leads to hetero-interfaces with low interface recombination velocities. These results were compared to previously reported findings, obtained on textured Czochralski (CZ) single crystalline substrates. a-SiNx:H is known to result in a field effect passivation. Nevertheless a strong influence of wet-chemical treatments on surface charge and recombination losses was observed on both flat and textured a-SiNx:H/c-Si interfaces. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)