Mechanism Behind the Easy Exfoliation of Ga2O3 Ultra-Thin Film Along (100) Surface
Mechanism Behind the Easy Exfoliation of Ga2O3 Ultra-Thin Film Along (100) Surface
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DOI：
10.1002/pssr.201800554
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发表时间：
2019-05-01
影响因子：
2.8
通讯作者：
Huda, Muhammad N.
中科院分区：
文献类型：
--
作者：
Barman, Sajib K.;Huda, Muhammad N.
透明宽带隙半导体Ga_2 O_3由于其广泛的应用前景而受到人们的广泛关注。尽管不是货车德瓦耳斯材料并且具有非常强的离子键合，但是该材料可以被机械地劈裂并且容易地沿着有利的表面沿着剥离以制造超薄层并且用于器件制造。这种材料的一个有趣的特性是，薄层保留了原始的块状电子特性，这使得它在功率器件中的应用更有前景。然而，很少有人知道的机制，为什么这样的超薄薄膜，甚至单双层剥离是有利的，从散装。本文通过对不同类型Ga-O成键特征的详细分析，解释了这一现象的机理。本研究中使用和开发的方法学协议也可用于理解其他复杂材料的键断裂和形成。这种理解将使我们更好地控制薄膜2D器件的制造。
The transparent wide band gap semiconductor -Ga2O3 has gained wide attention due to its suitability to a wide range of applications. Despite not being a van der Waals material and having highly strong ionic bonding, the material can be mechanically cleaved and exfoliated easily along favorable surfaces to make ultra-thin layers and used in device fabrications. One of the interesting properties of this material is that thin layers preserve the pristine bulk-like electronic properties, which makes it even more promising for applications in power devices. However, very little is known about the mechanism why such ultra-thin film or even single bilayer exfoliation is favorable from the bulk. In this letter, we have explained the mechanism of such phenomenon by detailed analyses of different types of Ga-O bonding character. The protocol of methodology used and developed in this study can be utilized in general to understand bond breaking and forming of other complex materials as well. This understanding will give us a better control to fabricate thin film 2D devices.