Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects
Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects
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DOI：
10.1021/acsaelm.9b00098
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发表时间：
2019-03
影响因子：
4.7
通讯作者：
Seung Min Lee;Y. Jang;Jong-Guk Jung;J. Yum;E. Larsen;Sang Yeon Lee;H. Seo;C. Bielawski;H. Lee;Jungwoo Oh
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作者：
Seung Min Lee;Y. Jang;Jong-Guk Jung;J. Yum;E. Larsen;Sang Yeon Lee;H. Seo;C. Bielawski;H. Lee;Jungwoo Oh
采用热原子层沉积（ALD）法在4 H-SiC（4 H-SiC）衬底上生长了氧化铍（BeO）薄膜。二乙基铍和水被用作关键的前体。增长率…
A crystalline beryllium oxide (BeO) film was grown on 4H-silicon carbide (4H-SiC) via thermal atomic layer deposition (ALD). Diethylberyllium and water were used as key precursors. The growth rate ...