Electron heating in GaAs due to electron-electron interactions.
Electron heating in GaAs due to electron-electron interactions.
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由于电子-电子相互作用而在砷化镓中产生电子加热。
DOI：
10.1103/physrevb.49.14762
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Heiblum
中科院分区：
文献类型：
--
作者：
Brill;Heiblum
通常研究半导体层中热电子的相互作用，假设散射机制仅影响注入的热电子分布，使冷电子和晶格处于热平衡。然而，如果从热电子到冷电子的能量转移足够大，则可以预期冷电子分布将被显著修改。我们研究了注入的热电子的相互作用，短暂地通过一个薄的掺杂GaAs层，与冷电子限制在该层。
The interactions of hot electrons in semiconductor layers are usually studied assuming the scattering mechanisms affect only the injected hot electron distribution, leaving the cold electrons and the lattice in thermal equilibrium. However, if the energy transfer from hot to cold electrons is sufficiently large the cold electron distribution can be expected to be significantly modified. We have studied the interactions of injected hot electrons, passing briefly through a thin doped GaAs layer, with cold electrons confined in the layer.