High signal output in current-perpendicular-to-the-plane giant magnetoresistance sensors using In–Zn–O-based spacer layers
High signal output in current-perpendicular-to-the-plane giant magnetoresistance sensors using In–Zn–O-based spacer layers
复制标题
使用 In-Zn-O 基间隔层的电流垂直于平面的巨磁阻传感器的高信号输出
DOI：
10.7567/apex.8.093003
复制
发表时间：
2015
影响因子：
2.3
通讯作者：
J. Childress
中科院分区：
文献类型：
--
作者：
T. Nakatani;G. Mihajlović;J. Read;Young;J. Childress
本文报道了以导电的Ag/In-Zn-O（IZO）/Zn三层膜为间隔层的电流垂直于平面巨磁电阻（CPP-GMR）传感器。在电阻-面积积（RA）= 60-120 mΩ µm2时，薄的多晶自旋阀的磁阻比高达26%，适用于硬盘驱动器（HDD）的现代读取传感器。大的CPP-GMR值归因于在铁磁体/IZO基间隔结的界面处的大的自旋相关散射。具有Ag/IZO/Zn间隔物的传感器的最大电压输出为ΔVmax = 11.3 mV，显著大于金属AgSn间隔物所观察到的最大电压输出（2.3 mV）。这种改进的性能对于记录密度大于1 Tbit/in.2的HDD读头是重要的。
We report current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with a conductive Ag/In–Zn–O (IZO)/Zn trilayer as the spacer layer. Magnetoresistance ratios as high as 26% at resistance–area product (RA) = 60–120 mΩ µm2 were obtained in thin, polycrystalline spin valves suitable for modern read sensors of hard disk drives (HDDs). The large CPP-GMR values are attributed to the large spin-dependent scattering at the interfaces of the ferromagnet/IZO-based spacer junctions. The maximum voltage output of sensors with Ag/IZO/Zn spacers was ΔVmax = 11.3 mV, significantly larger than that observed for metallic AgSn spacers (2.3 mV). Such improved properties are important for HDD read heads with recording densities larger than 1 Tbit/in.2.