Stochastic switching of TiO2-based memristive devices with identical initial memory states.
Stochastic switching of TiO2-based memristive devices with identical initial memory states.
复制标题
具有相同初始存储状态的基于 TiO2 的忆阻器件的随机切换
DOI：
10.1186/1556-276x-9-293
复制
发表时间：
2014
影响因子：
--
通讯作者：
Prodromakis T
中科院分区：
文献类型：
--
作者：
Li Q;Khiat A;Salaoru I;Xu H;Prodromakis T
在这项工作中，我们表明，具有相同的初始电阻状态相同的基于TiO 2的忆阻器件只是现象上相似，因为它们的内部结构可能会有很大的不同，这可能会导致非常不同的开关动态。我们的实验表明，具有类似的初始状态的实际设备的电阻开关可以发生在不同的编程刺激周期。我们认为，类似的记忆状态可以转录通过许多不同的活性核心状态，通过不同的减少TiO 2-xtagentary分布。我们的假设最终验证了通过模拟结果的记忆状态的演变，考虑到不同的初始随机分布。
In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-xfilamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution.