Quaternary InGaAsSb thermophotovoltaic diodes
Quaternary InGaAsSb thermophotovoltaic diodes
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DOI：
10.1109/ted.2006.885087
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发表时间：
2006-12-01
影响因子：
3.1
通讯作者：
Luryi, Serge
中科院分区：
文献类型：
--
作者：
Dashiell, Michael W.;Beausang, John E.;Luryi, Serge
采用金属有机物气相外延技术，在GaSb衬底上生长了晶格匹配的In-xGa 1-xAs-ySb 1-y热光伏（TPV）二极管，带隙范围为E-G = 0.5 ~ 0.6eV。利用前表面光谱控制滤波器的InGaAsSb TPV二极管被测量为热-电转换效率和功率密度（PD）分别为eta（TPV）= 19.7%和PD = 0.58 W/cm（2），其中T-辐射器的辐射器温度= 950摄氏度，T-二极管的二极管温度= 27摄氏度，并且二极管带隙E-G = 0.53 eV。使用测量的前表面光谱控制滤光片的复合系数和光学性质建立TPV能量转换效率的实际极限，在上述操作温度下，对于0.53-eV InGaAsSb TPV能量转换，所述光学性质为η（TPV）= 28%和PD = 0.85 W/cm（2）。最严重的性能限制是由1）由于固有俄歇复合引起的二极管开路电压（V-OC）限制和2）模块的非有源区中的寄生光子吸收所施加的。实验上，二极管V-OC比本征俄歇复合过程施加的实际极限低15%。InGaAsSb二极管的电性能与二极管结构的分析表明，V-OC，从而效率是有限的外部复合过程，如通过体缺陷。
In-x Ga1-x As-y Sb1-y thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of E-G = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density (PD) of eta(TPV) = 19.7% and PD = 0.58 W/cm(2), respectively, for a radiator temperature of T-radiator = 950 degrees C, diode temperature of T-diode = 27 degrees C, and diode bandgap of E-G = 0.53 eV.,Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters which for 0.53-eV InGaAsSb TPV energy conversion are eta(TPV) = 28% and PD = 0.85 W/cm(2) at the above operating temperatures. The most severe performance limits are imposed by 1) diode open-circuit voltage (V-OC) limits due to intrinsic Auger recombination and 2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V-OC is 15 % below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance versus diode architecture indicates that V-OC and thus efficiency are limited by extrinsic recombination processes such as through bulk defects.