He2+ irradiation induced microstructure evolution in sub-surface layer of the coarse-grained tungsten accessed by synchrotron GIXRD and GISAXS

He2+ irradiation induced microstructure evolution in sub-surface layer of the coarse-grained tungsten accessed by synchrotron GIXRD and GISAXS
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DOI:
10.1016/j.apsusc.2022.153461
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发表时间:
2022-04
影响因子:
6.7
通讯作者:
W. Huang;M. Sun;W. Wen;J.F. Yang;Z.M. Xie;R. Liu;X.P. Wang;X.B. Wu;C. Liu;Q. Fang-Q
W. Huang;M. Sun;W. Wen;J.F. Yang;Z.M. Xie;R. Liu;X.P. Wang;X.B. Wu;C. Liu;Q. Fang-Q
中科院分区:
材料科学1区
文献类型:
--
作者:
W. Huang;M. Sun;W. Wen;J.F. Yang;Z.M. Xie;R. Liu;X.P. Wang;X.B. Wu;C. Liu;Q. Fang-Q

文献摘要

相似文献

用同步掠入射X射线衍射(GIXRD)和掠入射小角X射线散射(GISAXS)研究了400 keV He2+在不同辐照剂量和温度下辐照粗晶W后亚表层组织的演变。不同入射角度下的GIX射线衍射峰的分裂表明,未辐照的粗晶W在近表面呈现压缩应变状态,而He离子辐照导致晶格膨胀,且随着辐照温度和辐照剂量的增加,这种膨胀更为严重。GISAXS结果结合透射电子显微镜分析表明,室温辐照后,由于He-V团簇的挤压,形成了均匀分布的高密度位错环,平均半径约为3.7 nm。400℃辐照后,样品内部形成了半径在1~3 nm之间的高密度氦气泡,而表面附近则出现了较大的气泡。这项工作为利用同步辐射GIXRD和GISAXS研究W合金亚表层辐照损伤提供了参考。
In this study the microstructure evolution in sub-surface layer of the coarse-grained W after irradiation of 400 keV He2+at different fluences and temperatures was assessed by synchrotron grazing incident X-ray diffraction (GIXRD) and grazing-incidence small-angle X-ray scattering (GISAXS). The splitting of GIXRD peaks obtained at different incident angles indicates that the un-irradiated coarse-grained W exhibits a compression strain state in the near surface and the He ions irradiation results in a lattice swelling which is more severe at higher irradiation temperature and fluence. The GISAXS results combined with the TEM analysis indicate that after irradiation at room temperature, uniformly distributed high density dislocation loops with an average radius of about 3.7 nm were formed due to the extrusion of He-V clusters. After irradiation at 400 °C, high density He bubbles with radii between 1 and 3 nm were formed in the sample interior, while large blisters appeared near the surface. This work provides a reference for the study of irradiation damage in the sub-surface layer of W alloys via synchrotron GIXRD and GISAXS.