Cation‐Alloying‐Induced Blue‐Shifted and Wide‐Spectrum Polarization‐Sensitive Photodetection in Quasi‐1D SbBiS3
Cation‐Alloying‐Induced Blue‐Shifted and Wide‐Spectrum Polarization‐Sensitive Photodetection in Quasi‐1D SbBiS3
复制标题
DOI：
10.1002/sstr.202200061
复制
发表时间：
2022-06
期刊：
影响因子：
15.9
通讯作者：
Wen Yang;Tao Xiong;Yueyang Liu;Juehan Yang;Qun Xu;Zhongming Wei
中科院分区：
文献类型：
--
作者：
Wen Yang;Tao Xiong;Yueyang Liu;Juehan Yang;Qun Xu;Zhongming Wei
Quasi‐1D ternary semiconductors have attracted considerable attention recently because of their additional bandgap engineering deriving from the variable stoichiometry. Herein, SbBiS3 single crystals are successfully synthesized by chemical vapor transport (CVT) method. The basic characterizations combined with theoretical calculations reveal that SbBiS3 semiconductor has an intrinsically low symmetry structure and in‐plane anisotropy of optical absorption. Significantly, the bandgap of SbBiS3 shows a blue‐shifted compared to the bandgaps of binary Sb2S3 and Bi2S3. Moreover, the quasi‐1D SbBiS3‐based photodetector shows a wide‐spectrum photosensitivity (360–1064 nm), a fast response speed (τrise ≈ 10 μs and τdecay ≈ 94 μs) at 532 nm, a high photoresponsivity (6.82 A W−1) at 360 nm. In addition, the photodetector exhibits an anisotropic photocurrent ratio up to 1.12 at 808 nm. The work demonstrates the SbBiS3 prepared by cationic alloy is a promising candidate for the application of polarized optoelectronics.
