Reliability study of phase-change nonvolatile memories
Reliability study of phase-change nonvolatile memories
复制标题
DOI：
10.1109/tdmr.2004.836724
复制
发表时间：
2004-09-01
影响因子：
2
通讯作者：
Bez, R
中科院分区：
文献类型：
--
作者：
Pirovano, A;Redaelli, A;Bez, R
本文对非易失性相变存储器（PCM）的可靠性进行了详细的研究，涵盖了与高密度阵列NVM相关的基本方面，即数据保留、耐久性、程序和读取干扰。分析了单个PCM电池的数据保留能力和持久特性，表明数据可以在110℃下存储10年，并且电池状态之间的两个数量级的电阻差异可以保持超过10（11）个编程周期。还讨论了导致器件失效前不稳定和最终失效的主要机制。最后，对读取和程序干扰的影响进行了清晰的评估，实验数据和模拟结果表明，在读出过程中引起的结晶和相邻位编程引起的热串扰不会影响PCM细胞的保留能力。
A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs. The data retention capabilities and the endurance characteristics of single PCM cells are analyzed, showing that data can be stored for 10 years at 110 degreesC and that a resistance difference of two order of magnitude between the cell states can be maintained for more than 10(11) programming cycles. The main mechanisms responsible for instabilities just before failure as well as for final device breakdown are also discussed. Finally, the impact of read and program disturbs are clearly assessed, showing with experimental data and simulated results that the crystallization induced during the cell read out and the thermal cross-talk due to adjacent bits programming do not affect the retention capabilities of the PCM cells.