High permittivity Li and Al doped NiO ceramics

High permittivity Li and Al doped NiO ceramics
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DOI:
10.1063/1.1827937
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发表时间:
2004-12-06
影响因子:
4
通讯作者:
Nan, CW
Nan, CW
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Lin, YH;Wang, JF;Nan, CW

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采用传统的固态合成方法制备了高介电常数锂铝共掺杂镍基陶瓷(LANO)。陶瓷的显微组织和成分分析表明,Al离子分布在晶界中,晶粒周围有以NiAl2O4为标志的均匀晶界。Al的浓度对LANO陶瓷的介电性能有显著影响。介电常数在低频时几乎保持恒定(类似于10(4)-10(5)),在高频处呈阶梯状下降。高介电常数响应主要由麦克斯韦-瓦格纳极化增强。(C) 2004年美国物理研究所。
High-permittivity dielectric NiO-based ceramics co-doped with Li and Al (LANO) have been prepared by a traditional solid-state synthesis. Analyses of the ceramic microstructure and composition indicate that Al ions are distributed in grain boundaries, and that uniform boundaries indexed as NiAl2O4 surround the grains. The concentration of Al has a remarkable effect on the dielectric properties of the LANO ceramics. The dielectric constant remains almost constant (similar to10(4)-10(5)) at low frequency and has a steplike decrease toward higher frequencies. The high-dielectric-constant response of the LANO ceramics is mainly enhanced by Maxwell-Wagner polarization. (C) 2004 American Institute of Physics.