Effect of Ti3SiC2 formation on p-type GaN by vacuum annealing on the contact properties
Effect of Ti3SiC2 formation on p-type GaN by vacuum annealing on the contact properties
复制标题
真空退火在 p 型 GaN 上形成 Ti3SiC2 对接触性能的影响
DOI：
10.1088/1757-899x/61/1/012034
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
M. Maeda and Y. Takahashi
中科院分区：
文献类型：
--
作者：
Aiman b. M. H.;M. Maeda and Y. Takahashi
通过沉积成分接近Ti3SiC2的Ti3SiC2三元薄膜，并在973K和1073K(低于p型碳化硅与Ti3SiC2接触的退火温度)下进行热处理，在p型GaN上形成了Ti3SiC2，通过X射线衍射、直流电导测试和霍尔效应测试分析了其接触性能。X-射线衍射结果表明，热处理后成功地形成了Ti3SiC2相。直流电导测试表明，Ti3SiC2形成后形成了欧姆接触。而霍尔效应测试表明，样品的主要载流子类型在973K热处理后仍由p型转变为n型，这可能是在热处理过程中形成N空位的原因。由于n型GaN与Ti3SiC2之间很难形成欧姆接触，因此讨论了退火态样品的接触性能。
In the present study, after the formation of Ti 3 SiC 2 on p-type GaN by depositing Ti-Si-C ternary film with a composition stoichiometrically close to Ti 3 SiC 2 and subsequent annealing at temperatures of 973 K and 1073 K (lower than the annealing temperature for a contact between p-type SiC and Ti 3 SiC 2), the resulting contact properties were analysed by X-ray diffraction, a direct-current conduction test, and a Hall-effect measurement test. The X-ray diffraction results reveal that the Ti 3 SiC 2 phase is successfully formed after the annealing. The direct-current conduction test shows that ohmic-like contacts are achieved after the formation of Ti 3 SiC 2. However, the Hall-effect measurement test reveals that the dominant carrier type of the specimens is inverted from p-type to n-type even after the annealing at 973 K. The N vacancy formation during the annealing is likely the cause of this change. The contact properties of the annealed specimens are discussed because it is difficult to achieve ohmic contact formation between n-type GaN and Ti 3 SiC 2.