Etch-induced damage in high-density inductively coupled plasma etching reactors
Etch-induced damage in high-density inductively coupled plasma etching reactors
复制标题
高密度电感耦合等离子体蚀刻反应器中蚀刻引起的损伤
DOI：
--
复制
发表时间：
1996
期刊：
影响因子：
--
通讯作者：
B. Singh
中科院分区：
文献类型：
--
作者：
D. Misra;W. Zhong;R. Bartynski;V. Patel;B. Singh
一个基本的理解，在电感耦合等离子体（ICP）蚀刻反应器中的薄氧化物的损害，需要使他们的广泛接受。XPS、C-V、DLTS和电击穿技术被用于研究能够产生非常均匀的等离子体的ICP反应器配置中的损伤。采用朗缪尔探针来研究均匀性，但是不能清楚地识别接近晶片表面的任何微观不均匀性。蚀刻引起的电损伤薄氧化层被发现是在良好的协议与物理损伤。有人观察到，退化到薄氧化物是与高能量电子轰击时，只有射频线圈与浮动射频电极，持有晶圆供电。然而，当线圈和电极都通电时，损伤强度是射频功率的函数。
A fundamental understanding of damage to thin oxides in inductively coupled plasma (ICP) etching reactors is required to enable their widespread acceptance. XPS, C - V, DLTS and electrical breakdown techniques were used to study damage in a ICP reactor configuration capable of generating very uniform plasma. A Langmuir probe was employed to study the uniformity but any micro-nonuniformity close to the wafer surface could not be clearly identified. Etch induced electrical damage to thin oxide was found to be in good agreement with physical damage. It was observed that the degradation to thin oxide is associated with the high-energy electron bombardment when only the rf coil is powered with a floating rf electrode that holds the wafer. However, when both the coil and the electrode are powered the intensity of damage is a function of rf power.