Imide-Modified Dinaphtho[1,2-b:2 ',1 '-d]thiophene and Dinaphtho[1,2-b:2 ',1 '-d]thiophene 13,13-Dioxide: Synthesis and Optoelectronic Properties
Imide-Modified Dinaphtho[1,2-b:2 ',1 '-d]thiophene and Dinaphtho[1,2-b:2 ',1 '-d]thiophene 13,13-Dioxide: Synthesis and Optoelectronic Properties
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DOI：
10.1021/acs.joc.5b01341
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发表时间：
2015
影响因子：
3.6
通讯作者：
Jun Yin
中科院分区：
文献类型：
--
作者：
Di Wu;Zhao Chen;Yufeng Zhang;Jing Zhang;Sheng Hua Liu;Jun Yin
二萘并噻吩已被报道为一种有前途的p型半导体。高性能n型半导体的开发是非常可取的。在多环芳烃中引入酰亚胺基团可以降低其LUMO能级，以满足n型有机半导体材料的基本要求。本文合成了四种酰亚胺修饰的二萘并噻吩和二萘并噻吩二氧化物。研究了它们的光电性质。它们的低LUMO能级使它们成为潜在的n型半导体候选者。
Dinaphthothiophene has been reported as a promising p-type semiconductor. The development of high-performance n-type semiconductors is highly desirable. The introduction of an imide group into polycyclic aromatic hydrocarbons can lower their LUMO levels to meet the basic requirement of n-type organic semiconductor materials. In this work, we have synthesized four imide-modified dinaphthothiophenes and dinaphthothiophenedioxides. Their optoelectronic properties have been investigated. Their low-lying LUMO levels make them potential n-type semiconductor candidates.