Extreme g-factor anisotropy induced by strain.
Extreme g-factor anisotropy induced by strain.
复制标题
由应变引起的极端 g 因子各向异性。
DOI：
10.1103/physrevb.43.12110
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
Allen
中科院分区：
文献类型：
--
作者：
Lin;Wei;Tsui;Klem;Allen
Magnetotransport measurements as a function of B-field orientation are studied on p-type strained-layer (001) GaAs/${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$As/GaAs quantum wells at temperatures from 4.2 to 0.4 K. It is shown that the two-dimensional holes are derived from the ${\mathit{m}}_{\mathit{j}}$=\ifmmode\pm\else\textpm\fi{}3/2 subbands and that the Zeeman splitting between the ${\mathit{m}}_{\mathit{j}}$=3/2 and ${\mathit{m}}_{\mathit{j}}$=-3/2 states of the same Landau level depends on the components of B perpendicular to the strained layer and not the total B. This g-factor anisotropy is shown to be a consequence of the large uniaxial strain in the ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$As layer.
Magnetotransport measurements as a function of B-field orientation are studied on p-type strained-layer (001) GaAs/${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$As/GaAs quantum wells at temperatures from 4.2 to 0.4 K. It is shown that the two-dimensional holes are derived from the ${\mathit{m}}_{\mathit{j}}$=\ifmmode\pm\else\textpm\fi{}3/2 subbands and that the Zeeman splitting between the ${\mathit{m}}_{\mathit{j}}$=3/2 and ${\mathit{m}}_{\mathit{j}}$=-3/2 states of the same Landau level depends on the components of B perpendicular to the strained layer and not the total B. This g-factor anisotropy is shown to be a consequence of the large uniaxial strain in the ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$As layer.