Characterization of functionalized pentacene field-effect transistors and its logic gate application
Characterization of functionalized pentacene field-effect transistors and its logic gate application
复制标题
功能化并五苯场效应晶体管的表征及其逻辑门应用
DOI：
--
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
J. Anthony
中科院分区：
文献类型：
--
作者：
J. Park;R. Vasić;J. Brooks;J. Anthony
功能化并五苯，6，13-双（三异丙基甲硅烷基乙炔基）并五苯（TIPS-并五苯），场效应晶体管（FET），通过热蒸发和溶液沉积方法，并测量迁移率作为温度和入射照明强度的函数。场效应迁移率（μFET）具有依赖于栅极电压的激活能。在高栅压（VG<− 30 V）下观察到非单调的温度依赖性，激活能Ea为60- 170 meV，取决于制造过程。迁移率随栅压的变化和非单调的温度变化表明，浅陷阱在TIPS并五苯薄膜的输运过程中起着重要的作用。在饱和状态下的电流以及迁移率在光照射时与光强度成比例地增加，这主要是由于光电导响应。由于短沟道效应，亚微米沟道长度的晶体管表现出不饱和的电流-电压特性。实现...
Functionalized pentacene, 6,13-bis(tri-isopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors (FETs) were made by both thermal evaporation and solution deposition methods, and the mobility was measured as a function of temperature and intensity of incident illumination. The field-effect mobility (μFET) has a gate-voltage dependent activation energy. A nonmonotonic temperature dependence was observed at high gate voltage (VG<−30V) with an activation energy of Ea∼60–170meV, depending on the fabrication procedure. The gate-voltage dependent mobility and nonmonotonic temperature dependence indicate that shallow traps play important role in the transport of TIPS-pentacene films. The current in the saturation regime as well as the mobility increase upon light illumination in proportion to the light intensity, mainly due to the photoconductive response. Transistors with submicron channel length showed unsaturating current-voltage characteristics due to the short channel effect. Realization of...