THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode
THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode
复制标题
由可调谐量子点激光二极管泵浦的基于量子点的太赫兹天线的太赫兹发射
DOI:
10.1109/cleoe-iqec.2013.6800814
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发表时间:
2013
期刊:
影响因子:
--
通讯作者:
E. Rafailov
中科院分区:
文献类型:
--
作者:
R. Leyman;D. Carnegie;K. Fedorova;N. Bazieva;S. Schulz;C. Reardon;E. Clarke;E. Rafailov
The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 μm, in this case by a single tunable dual-mode QD diode laser.