Origin of planar Hall effect in type-II Weyl semimetal MoTe2
Origin of planar Hall effect in type-II Weyl semimetal MoTe2
复制标题
II型Weyl半金属MoTe2平面霍尔效应的起源
DOI：
10.1063/1.5094231
复制
发表时间：
2019-05-01
期刊：
影响因子：
1.6
通讯作者：
Zhang, C. J.
中科院分区：
文献类型：
--
作者：
Liang, D. D.;Wang, Y. J.;Zhang, C. J.
Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test the chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, the origins of PHE in various systems are not fully distinguished and understood. Here we perform a systematic study on the PHE and anisotropic MR (AMR) of Td-MoTe2, a type-II WSM. Although the PHE and AMR curves can be well fitted by the theoretical formulas, we demonstrate that the anisotropic resistivity arises from the orbital MR (OMR), instead of the negative MR as expected in the chiral anomaly effect. In contrast, the absence of negative MR indicates that the large OMR dominates over the chiral anomaly effect. This explains why it is difficult to measure negative MR in type-II WSMs. We argue that the measured PHE can be related with the chiral anomaly only when the negative MR is simultaneously observed.
