Performance Potential of 2D Kagome Lattice Interconnects
Performance Potential of 2D Kagome Lattice Interconnects
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DOI：
10.1109/led.2019.2947285
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发表时间：
2019-12
影响因子：
4.9
通讯作者：
Tong Wu
中科院分区：
文献类型：
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作者：
Tong Wu
Kagome晶格材料是一种层状的二维(2D)材料，其中的原子以三六角形的平铺晶格图案排列。有人提出，Kagome晶格可以具有拓扑上的非平凡能带结构。通过原子量子输运模拟，我们发现Fe3SnKagome纳米带的拓扑边缘模具有良好的载流子输运特性，其平均自由程比体模大几个数量级。垂直堆积Kagome层可进一步提高单位宽度的电导。因此，2D Kagome晶格材料具有低的电阻率和在亚10 nm范围内的潜在互连应用前景。
Kagome lattice materials are layered two-dimensional (2D) materials in which atoms are arranged in a trihexagonal tiling lattice pattern. It has been suggested that the Kagome lattice can possess topologically non-trivial band structures. By performing atomistic quantum transport simulations, we show that the topological edge modes of a Fe3Sn Kagome nanoribbon have excellent carrier transport properties, with a mean free path several orders of magnitude larger than that of the bulk modes. Vertical stacking of intercalated Kagome layers can further boost the conductance per unit width. As a result, the 2D Kagome lattice materials offer low resistivity and promising potential for interconnect applications in the sub-10nm regime.