Modeling time dependence of the average interface migration rate in site-saturated recrystallization
Modeling time dependence of the average interface migration rate in site-saturated recrystallization
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DOI：
10.1007/s11661-997-0224-1
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发表时间：
1997-04
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影响因子：
--
通讯作者：
P. R. Rios
中科院分区：
文献类型：
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作者：
P. R. Rios
提出了一个模型来描述在再结晶过程中观察到的平均界面迁移率的时间依赖性。主要假设是扩展晶粒的生长速率可以写成再结晶分数的函数。根据这一假设，可以证明，平均界面迁移率可以写成两个因素的乘积。一种是与时间无关但与温度相关的界面迁移率。另一个因子可以仅作为归一化时间的函数，因此与温度无关。该模型与Speich和Fisher以及Vandermeer和拉特的结果吻合较好。它的结论是，本模型提供了一个合理的描述在再结晶的平均界面迁移率的时间依赖性。
A model is proposed to describe the time dependence of the average interface migration rate observed during recrystallization. The main assumption is that the growth rate of the extended grains can be written as a function of the recrystallized fraction. From this assumption, it could be demonstrated that the average interface migration rate can be written as a product of two factors. One is a time-independent but temperature-dependent interface migration rate. The other factor can be made a function of normalized time only and therefore is independent of temperature. The model shows good agreement with the results of Speich and Fisher and Vandermeer and Rath. It is concluded that the present model offers a plausible description for the time dependence of the average interface migration rate in recrystallization.