Microstructure and Electrical Conductivity of BaRuO3 Thin Films Prepared by Laser Ablation
Microstructure and Electrical Conductivity of BaRuO3 Thin Films Prepared by Laser Ablation
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DOI：
10.2320/matertrans.mra2007117
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发表时间：
2006-11
影响因子：
1.2
通讯作者：
A. Ito;H. Masumoto;T. Goto
中科院分区：
文献类型：
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作者：
A. Ito;H. Masumoto;T. Goto
采用激光烧蚀法制备了BaRuO 3 （BRO）薄膜，其衬底温度为室温~ 973 K，高真空（10 ~ 6 Pa），氧气压力（po2）为0.13 ~ 130 Pa。研究了沉积条件、微观结构、结合状态与电导率的关系。在po2 = 13 Pa, t> = 773 K的温度下，获得了晶粒细化良好的9r型BRO薄膜。BaRu 6 O 12与BRO在P = 10 -6 Pa和（T≤573 K）下共沉积。BRO薄膜的电导率（σ）与tsub和po2呈正相关。高导电性（σ > 10 4 S·m -1）的BRO薄膜表现为金属导电，低导电性（σ < 10 4 S·m -1）的BRO薄膜表现为半导体导电。在po2 = 13Pa, tsub = 773K条件下制备的BRO薄膜在室温下的最大a为7.7 × 10 4 S·m -1。
BaRuO 3 (BRO) thin films were prepared by laser ablation at substrate temperature (T sub ) ranging from room temperature to 973 K in a high vacuum (10 -6 Pa) and in O 2 at oxygen pressures (P o2 ) of 0.13 to 130 Pa. The relationship between deposition conditions, microstructure, binding state and electrical conductivity was investigated. 9R-type BRO thin film with well-crystallized fine grains was obtained at P o2 = 13 Pa and T sub > 773 K. BaRu 6 O 12 was co-deposited with BRO at P = 10 -6 Pa and (T sub > 573 K. The electrical conductivity (σ) of the BRO thin films positively correlated with T sub and P o2 . Highly conductive (σ > 10 4 S·m -1 ) BRO thin films showed metallic conduction whereas less conductive (σ < 10 4 S·m -1 ) BRO thin films showed semiconducting behavior. BRO thin film prepared at P o2 = 13Pa and T sub = 773K exhibited a maximum a of 7.7 x 10 4 S·m -1 at room temperature.