Observation of impurity band conduction and variable range hopping in heavily doped (010) β-Ga2O3
Observation of impurity band conduction and variable range hopping in heavily doped (010) β-Ga2O3
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DOI：
10.1088/1361-6641/ab0150
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发表时间：
2019-03-01
影响因子：
1.9
通讯作者：
Peterson, Rebecca L.
中科院分区：
文献类型：
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作者：
Kabilova, Zumrad;Kurdak, Cagliyan;Peterson, Rebecca L.
对一种重锡掺杂(010)β - ga2o3衬底进行了温度相关电阻率和霍尔测量。室温下，霍尔电子迁移率为77.7 cm(2)V(-1)s（-1）。在T = 185 K时，最大迁移率为95.2 cm(2)V(-1)s（-1）。由于掺杂浓度接近2.48 x 10(18)cm（-3）的Mott临界值，因此采用双带模型分析霍尔电子浓度和迁移率数据，该模型同时考虑了通过导带和杂质带的传输。在tbb0 ~ 200k时，电荷输运受到导带自由载流子的限制。得到供体电离能E-CD = 4 meV。在T
Temperature-dependent resistivity and Hall measurements were performed on a heavily Sn-doped (010) beta-Ga2O3 substrate grown by edge-defined film-fed method. At room temperature, the Hall electron mobility was 77.7 cm(2)V(-1)s(-1). A maximum mobility of 95.2 cm(2)V(-1)s(-1) was achieved at T = 185 K. Because the doping concentration is near the Mott critical value of 2.48 x 10(18)cm(-3), Hall electron concentration and mobility data were analyzed using the two-band model, which considers transport through both the conduction band and an impurity band. At T > 200 K, charge transport is limited by free carriers in the conduction band. The donor ionization energy was extracted to be E-CD = 4 meV. At T