Radiation-based near-field thermal rectification with phase transition materials
Radiation-based near-field thermal rectification with phase transition materials
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DOI：
10.1063/1.4825168
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发表时间：
2013-10
影响因子：
4
通讯作者：
Yue Yang;S. Basu;Liping Wang
中科院分区：
文献类型：
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作者：
Yue Yang;S. Basu;Liping Wang
这种控制热流的能力在热管理和热电路中有着广阔的应用前景。在这封信中，我们报道了在涨落电动力学的框架下，二氧化硅(SiO_2)和相变材料二氧化钒(VO2)之间的近场热辐射，通过纳米真空间隙分离出来的强大的热整流效应。SiO_2与绝缘VO_2之间的表面声子极化子的强耦合导致近场辐射传输增强，而当VO_2变成金属时，近场辐射传输被抑制，从而导致热整流。当真空间隙为1μm时，整流因子接近1；当发射极温度和接收器温度分别设置为400K和300K时，在小于20 nm的间隙处，整流因子增大到近2。用几纳米厚的薄膜代替体相二氧化硅，当真空间隙在100 nm左右时，整流系数可达到3。
The capability of manipulating heat flow has promising applications in thermal management and thermal circuits. In this Letter, we report strong thermal rectification effect based on the near-field thermal radiation between silicon dioxide (SiO2) and a phase transition material, vanadium dioxide (VO2), separated by nanometer vacuum gaps under the framework of fluctuational electrodynamics. Strong coupling of surface phonon polaritons between SiO2 and insulating VO2 leads to enhanced near-field radiative transfer, which on the other hand is suppressed when VO2 becomes metallic, resulting in thermal rectification. The rectification factor is close to 1 when vacuum gap is at 1 μm and it increases to almost 2 at sub-20-nm gaps when emitter and receiver temperatures are set to 400 and 300 K, respectively. Replacing bulk SiO2 with a thin film of several nanometers, rectification factor of 3 can be achieved when the vacuum gap is around 100 nm.