High switching performance of 1.7kV, 50A SiC power MOSFET over Si IGBT for advanced power conversion applications
High switching performance of 1.7kV, 50A SiC power MOSFET over Si IGBT for advanced power conversion applications
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1.7kV、50A SiC 功率 MOSFET 与 Si IGBT 相比具有高开关性能，适用于高级功率转换应用
DOI：
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发表时间：
2014
期刊：
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通讯作者：
S. Allen
中科院分区：
文献类型：
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作者：
S. Hazra;A. De;S. Bhattacharya;Lin Cheng;J. Palmour;M. Schupbach;B. Hull;S. Allen
与硅(Si)相比，碳化硅(SiC)具有较宽的禁带宽度，因此用碳化硅制作的MOSFET具有较低的漂移区电阻，是高压功率器件中的重要阻性元件。由于具有低的导通电阻和低的开关损耗，碳化硅MOSFET是设计高功率转换器的理想选择。基于SiCMOSFET的功率转换器具有较低的功耗和较高的开关频率下的工作能力，与使用SiIGBT的功率转换器相比，具有更高的效率和更小的体积。本文报道了由Cree公司设计研制的一种新型1.7KV，50A的SiCMOSFET的开关特性。在相同的测试装置上，测量了不同电路参数和工作条件下的SiCMOSFET的硬开关损耗，并与1.7KV，50A的SiIGBT进行了比较。在零电流开关(ZCS)条件下，对串联的1.7kVSiCMOSFET和1.7kVSiC肖特基二极管的开关性能进行了评估，并报道了重要的研究结果。
Silicon Carbide (SiC) has wider band gap compared to Silicon (Si) and hence MOSFET made in SiC has considerably lower drift region resistance, which is a significant resistive component in high-voltage power devices. Due to low on-state resistance combined with its inherently low switching loss, SiC MOSFET is an excellent candidate for high power converter design. With its lower power loss and operation capability at higher switching frequency, power converters based on SiC MOSFETs can offer much improved efficiency and compact size compared to those using Si IGBTs. In this paper, we report switching performance of a new 1.7kV, 50A SiC MOSFET; designed and developed by Cree, Inc. Hard-switching losses of the SiC MOSFETs with different circuit parameters and operating conditions are measured and compared with the 1.7kV, 50A Si IGBTs, using the same test setup. Switching performance of the 1.7kV SiC MOSFET and 1.7kV SiC Schottky diode connected in series are also evaluated under a zero current switching (ZCS) condition and important findings are reported.