GaN Power Transistors on Si Substrates for Switching Applications
GaN Power Transistors on Si Substrates for Switching Applications
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DOI：
10.1109/jproc.2009.2034397
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发表时间：
2010-07-01
影响因子：
20.6
通讯作者：
Yoshida, Seikoh
中科院分区：
文献类型：
--
作者：
Ikeda, Nariaki;Niiyama, Yuki;Yoshida, Seikoh
本文报道了用于功率开关的硅基氮化镓功率晶体管。氮化镓异质结场效应晶体管（HFET）结构在硅上是实现低损耗、高功率器件的重要配置，也是经济高效的解决方案之一。讨论了硅衬底上gan - hfet的电流坍缩现象，由于采用导电硅衬底，抑制了电流坍缩现象。此外，还研究了正常关闭gan - fet的尝试。混合金属-氧化物-半导体HFET结构是获得低导通电阻（Ron）和高击穿电压（Vb）器件的有希望的候选材料。
In this paper, GaN power transistors on Si substrates for power switching application are reported. GaN heterojunction field-effect transistor (HFET) structure on Si is an important configuration in order to realize a low loss and high power devices as well as one of the cost-effective solutions. Current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate. Furthermore, attempts for normally off GaN-FETs were examined. A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance (Ron) and a high breakdown voltage (Vb).