Immersion plating of copper onto porous silicon with different thickness
Immersion plating of copper onto porous silicon with different thickness
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DOI：
10.1016/j.electacta.2004.06.007
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发表时间：
2004-10
影响因子：
6.6
通讯作者：
Didier Hamm;T. Sakka;Y. Ogata
中科院分区：
文献类型：
--
作者：
Didier Hamm;T. Sakka;Y. Ogata
这项工作旨在详细描述多孔硅样品在浸铜过程中的质量变化。通过感应耦合等离子体光谱(ICP)对沉积的铜进行重量测量和定量，可以分离出对质量变化的贡献。结果表明，在较短的浸泡时间内，浸镀过程与多孔层厚度无关。然而，在长时间浸泡后，沉积停止，厚的多孔层没有被完全氧化。多孔层的氧化是均匀的，并随着时间的推移而深入进行，直到几微米。
This work aims to detail the mass change of a porous silicon sample during copper immersion plating. Gravimetric measurements and quantification of the deposited copper by induced coupled plasma spectroscopy (ICP) permit to separate the contributions to the mass change. The results indicate that immersion plating proceeds independently of the porous layer thickness at short immersion time. However, after long immersion duration, the deposition stops and thick porous layers are not fully oxidised. The oxidation of the porous layer is homogeneous and proceeds in depth with time, down to several micrometers.