K. Maehashi, S. Hasegawa, M. Sato, H. Nakashima T. Ito and A. Hiraki: "Initial Stages of GaAs MBE Growth on Porous Si" Tech. Digest of 1st Int. Meatingon Advanced Processing and Characterization Technologies. 119-122 (1989)
K. Maehashi, S. Hasegawa, M. Sato, H. Nakashima T. Ito and A. Hiraki: "Initial Stages of GaAs MBE Growth on Porous Si" Tech. Digest of 1st Int. Meatingon Advanced Processing and Characterization Technologies. 119-122 (1989)
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K. Maehashi、S. Hasekawa、M. Sato、H. Nakashima T. Ito 和 A. Hiraki：“多孔硅上 GaAs MBE 生长的初始阶段”技术。
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