Fabrication and electrochemical properties of boron-doped SiC
Fabrication and electrochemical properties of boron-doped SiC
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DOI：
10.1016/j.carbon.2020.12.017
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发表时间：
2021-04
期刊：
影响因子：
10.9
通讯作者：
Kazuki Uchiyama;Takashi Yamamoto;Y. Einaga
中科院分区：
文献类型：
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作者：
Kazuki Uchiyama;Takashi Yamamoto;Y. Einaga
碳化硅（SiC）具有优异的性质，例如化学和物理稳定性、生物相容性和高导热性。然而，SiC的导电性对于电化学应用来说不够高，这一直是一个主要的挑战。在此，为了提高导电性，我们制备了硼掺杂的SiC（SiC：B）并评价了电化学性能。采用微波等离子体化学气相沉积法制备了SiC和SiC：B。结构表征表明，SiC：B的主相为3C-SiC，其中硼的掺杂浓度可以通过调节生长条件来控制。循环伏安法测试表明，SiC：B电极的电化学性能与玻碳电极相当。
Silicon carbide (SiC) has excellent properties such as chemical and physical stability, biocompatibility, and high thermal conductivity. However, electrical conductivity of SiC is not high enough for electrochemical applications, which has been a major challenge. Here, in order to improve the conductivity, we prepared boron-doped SiC (SiC:B) and evaluated the electrochemical properties. SiC and SiC:B were fabricated by a microwave plasma chemical vapor deposition method. Structural characterization revealed that the main phase of SiC:B is 3C–SiC where the concentration of doped boron could be controlled by tuning the growth conditions. Electrochemical properties were evaluated by cyclic voltammetry measurements, indicating that the reactivity and sensitivity of the SiC:B electrode was comparable of that of the glassy carbon electrode.