Highly sensitive strained AlN on Si(111) resonators
Highly sensitive strained AlN on Si(111) resonators
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DOI：
10.1016/j.sna.2008.12.005
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发表时间：
2009-03
影响因子：
4.6
通讯作者：
M. Placidi;J. Moreno;P. Godignon;N. Mestres;É. Frayssinet;F. Semond;C. Serre
中科院分区：
文献类型：
--
作者：
M. Placidi;J. Moreno;P. Godignon;N. Mestres;É. Frayssinet;F. Semond;C. Serre
在这项研究中，我们报告了两种方法来制造独立的单晶氮化铝微机械器件结构的Si（111）衬底上。一种方法的基础上，只有硅蚀刻技术进行了演示，并与传统工艺的差异进行了详细说明。释放的AlN结构的机械性能，其特征在于通过共振测量和显微拉曼光谱。的谐振结构的谐振频率和品质因数的增强，从而灵敏度，提出了使用外延AlN。这种高质量的材料，由于与Si衬底的热失配而高度应变，允许制造改进的高灵敏度AlN基微/纳米机电系统和传感器。
In this study, we report two methods to fabricate freestanding single-crystalline aluminium nitride micromechanical device structures on Si(111) substrates. A method based only on Si etching techniques is demonstrated, and the differences with the conventional process are detailed. The mechanical properties of the released AlN structures are characterized by resonance measurements and micro-Raman spectroscopy. An enhancement of the resonant frequency and quality factor of resonant structures, and thus the sensitivity, is proposed using epitaxial AlN. This high quality material, highly strained due to thermal mismatch with Si substrate, allows the fabrication of improved high sensitivity AlN-based micro/nano electro-mechanical systems and sensors.