Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
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DOI：
10.7567/jjap.53.050307
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发表时间：
2014-04
影响因子：
1.5
通讯作者：
S. Ohmagari;T. Hanada;Y. Katamune;S. Al-Riyami;T. Yoshitake
中科院分区：
文献类型：
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作者：
S. Ohmagari;T. Hanada;Y. Katamune;S. Al-Riyami;T. Yoshitake
研究了n型硅衬底和p型B掺杂超纳米晶金刚石/氢化非晶碳复合薄膜(UNCd/a-C：H)异质结光电二极管中的载流子输运和光检测。在电学测量的基础上讨论了它们的输运模型。结果表明，UNCD/a-C：H中的a-C：H基质将主要负责光电二极管中的载流子输运。在254 nm和365 nm紫外光照射下，光电二极管的外量子效率分别达到72%和23%。这些优异的响应可能归因于UNCD颗粒中光载流子的产生，并伴随着向a-C：H基质的有效载流子传输。
Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was discussed mainly on the basis of electrical measurements. It was revealed that an a-C:H matrix in UNCD/a-C:H would predominantly be responsible for carrier transportation in the photodiodes. The photodiodes exhibited high external quantum efficiencies of 72 and 23% under 254 and 365 nm UV illuminations, respectively. These superior responses might be attributable to the photocarrier generation in UNCD grains accompanied by an efficient carrier transport to the a-C:H matrix.