Aligned Carbon Nanotube Film Self-Organized on a SiC Wafer
Aligned Carbon Nanotube Film Self-Organized on a SiC Wafer
复制标题
SiC 晶圆上自组织排列的碳纳米管薄膜
DOI：
10.1143/jjap.37.l605
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发表时间：
1998
影响因子：
1.5
通讯作者：
T. Hirayama
中科院分区：
文献类型：
--
作者：
M. Kusunoki;J. Shibata;Masumi Rokkaku;T. Hirayama
通过在真空电炉中于1700°C加热30 min，在α-SiC晶片表面上制备定向碳纳米管膜。发现在SiC衬底上容易制备大面积的碳纳米管膜。由电子衍射图得到构成CNT的石墨的（0002）晶格距离为0.344nm。
An aligned carbon nanotube film was fabricated on the surface of an α-SiC wafer by heating at 1700°C for 30 min. in a vacuum electric furnace due to the decomposition of SiC by selected desorption. It was found to be easy to produce a large-area carbon nanotube film on the SiC substrate. The (0002) lattice distance of graphite constructing the CNTs was obtained to be 0.344 nm from the electron diffraction pattern.