Resistive Switching Effect Enhanced by Illumination in Ag/GeO2/FTO Device
Resistive Switching Effect Enhanced by Illumination in Ag/GeO2/FTO Device
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Ag/GeO2/FTO 器件中照明增强电阻开关效应
DOI：
10.1166/nnl.2015.1962
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发表时间：
2015-05
影响因子：
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通讯作者：
Peng Chen
中科院分区：
文献类型：
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作者：
Bai Sun;Yonghong Liu;Jinggao Wu;Peng Chen
阻变存储器是下一代非易失性随机存取存储器的理想选择。本文研究了Ag/GeO 2/FTO器件的阻变效应。特别地，可以通过照明来增强阻变特性。该器件在室温光照下，在100次循环中可以保持上级可逆稳定性，关/通态电阻比约为103。本研究对于开发具有发展前景的光控阻变器件具有一定的参考价值。
The resistive switching is an outstanding candidate for next-generation nonvolatile random-access memory device. In this work, resistive switching effect of Ag/GeO2/FTO device is demonstrated. In particular, the resistive switching characteristics can be enhanced by illumination. The device can maintain superior reversible stability over 100 cycles with an OFF/ON-state resistance ratio of about 103 under illumination at room temperature. This study is useful for exploring the promising light-controlled resistive switching device.