Ionization-induced carrier transport in InAlAs/InGaAs high electron mobility transistors
Ionization-induced carrier transport in InAlAs/InGaAs high electron mobility transistors
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InAlAs/InGaAs 高电子迁移率晶体管中电离诱导的载流子传输
DOI：
10.1109/tns.2004.835060
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发表时间：
2004
影响因子：
1.8
通讯作者：
J. Melinger
中科院分区：
文献类型：
--
作者：
D. McMorrow;A. Knudson;J. B. Boos;Doe Park;J. Melinger
时间分辨电荷收集测量和二维器件模拟InAlAs/InGaAs高电子迁移率晶体管（HEMT）的离子和脉冲激光激发地址在这些异质结器件的电荷收集和增强的机制。体砷化镓场效应晶体管的结果进行了比较。在HEMT中，电离诱导的增强电流与源极/沟道势垒的显著降低相关联，并且在很大程度上局限于InGaAs阱。模拟表明，势垒降低的主要贡献者是多余的空穴密度，在InAlAs缓冲层中开发。
Time resolved charge-collection measurements and two-dimensional device simulations performed on InAlAs/InGaAs high electron mobility transistors (HEMTs) for ion and pulsed laser excitation address the mechanisms of charge collection and enhancement in these heterostructure devices. The results are compared to those for bulk GaAs field-effect transistors. In the HEMTs, the ionization-induced enhancement current is associated with a significant lowering of the source/channel barrier, and is largely confined to the InGaAs well. The simulations suggest that the primary contributor to the barrier lowering is an excess hole density that develops in the InAlAs buffer layer.