A dual-wavelength indium gallium nitride quantum well light emitting diode
A dual-wavelength indium gallium nitride quantum well light emitting diode
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DOI：
10.1063/1.1410345
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发表时间：
2001-10-15
影响因子：
4
通讯作者：
Krames, M
中科院分区：
文献类型：
--
作者：
Ozden, I;Makarona, E;Krames, M
我们设计并实现了一个由两个有源InGaN/GaN多量子阱组成的单片双波长蓝/绿色发光二极管（LED）。这些片段是单个垂直外延结构的一部分，其中p（++）/n（++）InGaN/GaN隧道结插入在LED之间，在该概念验证器件中分别以470 nm和535 nm发射。该设备已被操作为三端设备，每个LED的独立电气控制到纳秒的时间尺度。(C)2001年美国物理学会。
We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p(++)/n(++) InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale. (C) 2001 American Institute of Physics.