NOVEL WETTING BEHAVIOR IN QUANTUM FILMS
NOVEL WETTING BEHAVIOR IN QUANTUM FILMS
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DOI：
10.1103/revmodphys.65.557
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发表时间：
1993-04-01
影响因子：
44.1
通讯作者：
TREINER, J
中科院分区：
文献类型：
--
作者：
CHENG, E;COLE, MW;TREINER, J
理论和实验表明，当Cs表面暴露于He-4蒸气中时，会发生新的行为。当温度T低于润湿温度（T（w）等于2 K）时，He-4在蒸汽压P从零增加到饱和值时只形成一层微观薄膜。对于T的中间值（T（w）小于或等于T小于或等于T（c）等于2.5K），膜厚度在预湿转变压力P（pw）（T）处不连续地跳跃。对于P > P（pw），ad对于所有P，如果T > T（c），当接近饱和时，薄膜连续生长到无限厚。这些现象的微观理论讨论的电子和原子相互作用的基本物理。初步的实验观察进行了总结。相关的现象的兴趣进行了描述，包括观察预润湿与吸附物以外的他和基板以外的Cs。
Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He-4 vapor. For temperature T below the wetting temperature (T(w) congruent-to 2 K), He-4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T(T(w) less-than-or-equal-to T less-than-or-equal-to T(c) congruent-to 2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure P(pw)(T). For P > P(pw), ad for all P if T > T(c), the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.