Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing
Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing
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DOI：
10.1016/j.jcrysgro.2009.03.048
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发表时间：
2009-06
影响因子：
1.8
通讯作者：
Yuheng Zeng;Jiahe Chen;M. Ma;Weiyan Wang;Deren Yang
中科院分区：
文献类型：
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作者：
Yuheng Zeng;Jiahe Chen;M. Ma;Weiyan Wang;Deren Yang
