Optical second-harmonic generation in sputter-deposited AlN films
Optical second-harmonic generation in sputter-deposited AlN films
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溅射沉积 AlN 薄膜中的光学二次谐波产生
DOI：
10.1063/1.368908
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发表时间：
1998
影响因子：
3.2
通讯作者：
J. Ketterson
中科院分区：
文献类型：
--
作者：
G. Kiehne;G. Wong;J. Ketterson
本文报道了用直流磁控溅射法在硼硅酸盐玻璃上沉积AlN薄膜时光学二次谐波产生的研究结果。通过X射线衍射（XRD）测定，膜具有高度的c轴取向。测量了膜厚度范围为340至7800 A的透射SH信号。该信号与在有效厚度为1000 A的膜表面上存在死层（其中没有产生SH）一致。在从环境温度到Ts=400 °C的衬底温度下沉积一组7800-A厚的膜。对于在100 °C或更高温度下沉积的膜，发现SH信号随Ts的变化最小。|D33| =4 pm/V，|D31| =0.04 pm/V，其中d33和d31具有相同的符号。确定了膜的光轴相对于基底表面法线的近似倾斜角。XRD结果表明，这种倾斜是由于晶体学织构轴的倾斜。
Results of a study of optical second-harmonic (SH) generation in AlN films deposited on borosilicate glass by reactive direct current magnetron sputtering are reported. As determined by x-ray diffraction (XRD), the films were highly c-axis oriented. The transmitted SH signal for film thickness ranging from 340 to 7800 A was measured. The signal was consistent with the existence of a dead layer (in which no SH was generated) on the film surface with an effective thickness of ∼300 A. A set of 7800-A-thick films were deposited at substrate temperatures from ambient to Ts=400 °C. For films deposited at 100 °C or higher, minimal variation in the SH signal with Ts was found. Values of |d33|=4 pm/V and |d31|=0.04 pm/V, with d33 and d31 having the same sign, were obtained for Ts=400 °C. The approximate tilt angle of the optic axis of the films with respect to the substrate surface normal was determined. XRD results showed that the tilt was due to a tilt of the crystallographic texture axis.