Photoionization Mass Spectrometric Study of Si, H
Photoionization Mass Spectrometric Study of Si, H
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Si、H 的光电离质谱研究
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Hc
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B. Rustic;J. Berkowitz;For Si;H. Si;Si Hc;Hc
绝热 I.P.通过光电离质谱研究在两个温度下获得的 Si,H 值为 9.74 f 0.02 eV。第一个片段 Si, Hz 最初在 < 10.04 f 0.02 eV 处出现浅斜率，在 6 10.81 5 0.02 eV 处出现更陡的斜率。有人认为，最初的起始点对应于 H、SiSiH,+ 的形成，而较陡的起始点则归因于 H、SiSiH + 的形成。第二个片段 Si, H, 的出现电势 < 11.59 f 0.02 eV（11.41 f 0.03 是一个可能值）。连续分解产生 Si, Hc（来自 Si, Hc）和 Si, Hl（来自 Si, H,f）。 Si、H,+ 的光电离子产率曲线也显示出浅且陡的起始点。外观势的上限可以很容易地提取，但真正的热化学起始点还不太明确。给出了每个物种的形成热（或上限）。实验值与最近的从头计算计算非常吻合。对于子代物种，实验值超出了计算值，正如预期的那样。
The adiabatic I.P. of Si,H, obtained by a photoionization mass spectrometric study at two temperatures is 9.74 f 0.02 eV. The first fragment, Si, Hz, initially appears with a shallow slope at < 10.04 f 0.02 eV, and with a much steeper slope at 6 10.81 5 0.02 eV. It is argued that the initial onset corresponds to formation of H, SiSiH,+ , while the steeper onset is attributed to formation of H, SiSiH +. The second fragment, Si, H, , has an appearance potential of < 11.59 f 0.02 eV (11.41 f 0.03 is a probable value). Successive decomposition leads to Si, Hc (from Si, Hc) and Si, Hl (from Si, H,f). The photoion yield curve for Si, H,+ also displays shallow and steep onsets. Upper limits for the appearance potentials can be readily extracted, but the true thermochemical onsets are less well defined. Heats of formation (or upper limits) are presented for each of these species. the experimental values are in good agreement with recent ab initio calculations. For the daughter species, the experimental values exceed the calculated ones, as expected.