Using saturated SiGe HBTs to realize ultra-low voltage/power X-band low noise amplifiers
Using saturated SiGe HBTs to realize ultra-low voltage/power X-band low noise amplifiers
复制标题
利用饱和SiGe HBT实现超低电压/功率X波段低噪声放大器
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
J. Cressler
中科院分区：
文献类型：
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作者：
S. Seth;C. Poh;T. Thrivikraman;R. Arora;J. Cressler
一种超低电压、单片9ghz （x波段）低噪声放大器采用0.13µm SiGe BiCMOS技术实现。SiGe HBTs故意偏向弱饱和（VCE为0.5 V）。这使得LNA可以在300k下工作，仅使用来自1v电源的2.4 mW直流功率，同时在9 GHz时提供16.7 dB增益和3.5 dB噪声系数。在90 K时，该SiGe LNA仅以600 μ W的功率实现17.5 dB增益，在亚环境温度下工作的任何已知x波段LNA中都创下了记录。
An ultra-low voltage, monolithic 9 GHz (X-band) low noise amplifier has been implemented in 0.13 µm SiGe BiCMOS technology. The SiGe HBTs were intentionally biased in weak saturation (VCE at 0.5 V). This allows the LNA to operate at 300 K using only 2.4 mW of dc power from a 1 V supply, while delivering 16.7 dB gain and 3.5 dB noise figure at 9 GHz. At 90 K, this SiGe LNA achieves 17.5 dB of gain at only 600 µW of power, record performance for any known X-band LNA operating at sub-ambient temperatures.