Hybrid Hetero p-n Junction between ZnO Microspheres and p-Type Materials
Hybrid Hetero p-n Junction between ZnO Microspheres and p-Type Materials
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DOI：
10.4028/www.scientific.net/amr.1119.184
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发表时间：
2015-07
期刊：
影响因子：
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通讯作者：
T. Ikebuchi;N. Tetsuyama;M. Higashihata;H. Ikenoue;D. Nakamura;T. Okada
中科院分区：
文献类型：
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作者：
T. Ikebuchi;N. Tetsuyama;M. Higashihata;H. Ikenoue;D. Nakamura;T. Okada
报道了氧化锌微球与p-GaN薄膜或聚(3，4-乙二氧基噻吩基)：聚苯乙烯磺酸(PEDOT：PSS)的混合异质p-n结。利用高能量聚焦脉冲激光烧蚀氧化锌烧结靶，制备了结晶质量较高的氧化锌微球。最近的研究表明，在脉冲激光照射下，氧化锌微球具有很高的光学性质和从微米级到回音廊模式的激光作用。在本研究中，我们制备了一种氧化锌微球与p-GaN或PEDOT：PSS混合异质结，并且这两种p-n结都具有良好的整流特性。对于p-GaN，在正向偏压下观察到了电致发光。
We report a hybrid hetero p-n junction between Zinc Oxide (ZnO) microspheres and p-GaN thin film or poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS). ZnO microspheres, which have high crystalline quality, were synthesized by ablating a ZnO sintered target with focused pulsed laser at high fluence. Recent investigation has demonstrated that ZnO microspheres had high optical property and laser actions in the WGM (whispering gallery mode) from the microshperes under pulsed laser irradiation. In this study, we fabricated a hybrid hetero p-n junction between ZnO microspheres and p-GaN or PEDOT:PSS, and both p-n junctions with p-GaN or PEDOT:PSS had a good rectifying characteristic. In the case of p-GaN, electroluminescence was observed under forward bias.