A novel gate-coupled SCR ESD protection structure with high latchup immunity for high-speed I/O pad
A novel gate-coupled SCR ESD protection structure with high latchup immunity for high-speed I/O pad
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DOI：
10.1109/led.2004.826529
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发表时间：
2004-05
影响因子：
4.9
通讯作者：
Chun-Hsiang Lai;Meng-Hwang Liu;Shin Su;Tao-Cheng Lu;S. Pan
中科院分区：
文献类型：
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作者：
Chun-Hsiang Lai;Meng-Hwang Liu;Shin Su;Tao-Cheng Lu;S. Pan
一种新型的静电放电（ESD）保护器件，即一种高抗闩锁性能的栅耦合p型低压触发可控硅整流器，已被证明是一种有效的ESD保护器件，具有低电容负载效应。通过适当的控制电路，可以实现高于10 V的触发电压和大于90 mA的触发电流，而保持电压在正常工作时仍高于3 V，从而提供了出色的闩锁抗扰度。在ESD情况下，这种新型可控硅整流器件可以快速触发并提供有效的放电路径。
A novel electrostatic discharge (ESD) protection device, namely, a highly latchup-immune gate-coupled p-type low-voltage-trigger silicon-controlled rectifier, has been demonstrated to be an effective ESD protection device with low capacitive-loading effect. With the proper control circuit, a trigger voltage higher than 10 V and a trigger current larger than 90 mA can be achieved, while the holding voltage is still higher than 3 V under normal operation, which provides excellent latchup immunity. In the event of an ESD, this novel silicon-controlled rectifier device could trigger quickly and provide an effective discharging path.