Enabling on-axis InSb crystal growth for high-volume wafer production: characterizing and eliminating variation in electrical performance for IR focal plane array applications
Enabling on-axis InSb crystal growth for high-volume wafer production: characterizing and eliminating variation in electrical performance for IR focal plane array applications
复制标题
实现轴上 InSb 晶体生长以实现大批量晶圆生产：表征并消除红外焦平面阵列应用的电气性能变化
DOI：
10.1117/12.2223956
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Nikolas W. Gossett
中科院分区：
文献类型：
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作者：
Jason L. Merrell;Nathan W. Gray;J. Bolke;A. N. Merrell;A. Prax;Jonathan Demke;Nikolas W. Gossett
InSb焦平面阵列(FPA)探测器是红外成像系统中的关键部件，对成本和性能都有重要影响。探测器的性能受半导体衬底的电子和晶体质量及均匀性的影响。要按照FPA器件制造所需的标准大批量、高成品率地生产InSb晶片，需要生长轴上的{111}晶体。各向异性掺杂是阻碍轴向直拉单晶生长的内在原因。我们报告了新开发的生长方法，这些方法消除了各向异性掺杂剂掺杂的负面影响，使得能够大量制造{111}取向的衬底，并讨论了由此产生的制造优势。我们还报告了一种表征晶片上微尺度掺杂变化的表征技术。
InSb focal plane array (FPA) detectors are key components in IR imaging systems that significantly impact both cost and performance. Detector performance is affected by the electronic and crystallographic quality and uniformity of the semiconductor substrate. High-volume, high-yield production of InSb wafers to the standards required for FPA device manufacture requires growth of on-axis {111} crystals. An inherent source of variation hindering on-axis Czochralski crystal growth is anisotropic dopant incorporation. We report on newly developed growth methods that eliminate the negative effects of anisotropic dopant incorporation enabling high volume manufacturing of {111}-oriented substrates and discuss the consequential manufacturing benefits. We also report on a characterization technique to characterize microscale dopant variation across the wafer.