Recent Progress in GaN-Based Light-Emitting Diodes
Recent Progress in GaN-Based Light-Emitting Diodes
复制标题
GaN基发光二极管的最新进展
DOI：
10.1002/adma.200901349
复制
发表时间：
2009-12-04
影响因子：
29.4
通讯作者：
Chen, Hong
中科院分区：
文献类型：
--
作者：
Jia, Haiqiang;Guo, Liwei;Chen, Hong
在过去的几年中，GaN基白色发光二极管（LED）作为商业上可获得的固态光源已经引人注目。为了提高发光功率，我们对GaN LED外延材料进行了研究。首先，一个特殊的无掩模的V形槽的c面蓝宝石，GaN横向外延过生长的方法在此衬底上开发，因此获得的GaN薄膜具有低位错密度和增加的发光效率（因为从V形槽平面的反射增强）。此外，研究了非对称耦合InGaN/GaN量子阱结构中的反常隧穿辅助载流子转移。利用这种效应设计了一种新的量子阱结构，将LED的发光效率提高到72%左右。最后，制作了单片无荧光粉白色LED，在20 ~ 60 mA电流范围内均能发出稳定的白色光，适合照明应用。
In the last few years the GaN-based white light-emitting diode (LED) has been remarkable as a commercially available solid-state light source. To increase the luminescence power, we studied GaN LED epitaxial materials. First, a special maskless V-grooved c-plane sapphire was fabricated, a GaN lateral epitaxial overgrowth method on this substrate was developed, and consequently GaN films are obtained with low dislocation densities and an increased light-emitting efficiency (because of the enhanced reflection from the V-grooved plane). Furthermore, anomalous tunneling-assisted carrier transfer in an asymmetrically coupled InGaN/GaN quantum well structure was studied. A new quantum well structure using this effect is designed to enhance the luminescent efficiency of the LED to similar to 72%. Finally, a single-chip phosphor-free white LED is fabricated, a stable white light is emitted for currents from 20 to 60 mA, which makes the LED chip suitable for lighting applications.