Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode
Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode
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DOI：
10.1063/1.1480484
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发表时间：
2002-05-20
影响因子：
4
通讯作者：
Campbell, JC
中科院分区：
文献类型：
--
作者：
Collins, CJ;Chowdhury, U;Campbell, JC
报道了具有高零偏压外量子效率的Al_xGa_(1-x)N基日盲p-i-n光电二极管的探测性能的提高。在269 nm处的零偏压外量子效率接近42%，在-5V的反向偏压下增加到46%。此外，在-5V的反向偏置下，光电二极管的暗电流密度为8.2×10(-11)A/cm(2)，这导致了大的差动电阻。高量子效率和大的差动电阻相结合，产生了类似于2.0x10(14)厘米赫兹(1/2)W-1的高探测率D*。这些结果归因于Al0.6Ga0.4N窗口n区的使用，这允许改善对吸收区域的透射率，并由于改善了材料质量。(C)2002年美国物理研究所。
We report the improved detectivity of AlxGa1-xN-based solar-blind p-i-n photodiodes with high zero-bias external quantum efficiency. The zero-bias external quantum efficiency was similar to42% at 269 nm, and increased to similar to46% at a reverse bias of -5 V. In addition, the photodiodes exhibited a low dark current density of 8.2x10(-11) A/cm(2) at a reverse bias of -5 V, which resulted in a large differential resistance. The high quantum efficiency and large differential resistance combine to yield a high detectivity of D*similar to2.0x10(14) cm Hz(1/2) W-1. These results are attributed to the use of an Al0.6Ga0.4N window n region, which allows improved transmission to the absorption region, and to improved material quality. (C) 2002 American Institute of Physics.