Dark-current estimation method for CMOS APS sensors in mixed radiation environment
Dark-current estimation method for CMOS APS sensors in mixed radiation environment
复制标题
混合辐射环境下CMOS APS传感器暗电流估计方法
DOI：
10.1016/j.nima.2018.09.146
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Hu Yann
中科院分区：
文献类型：
--
作者：
Zheng Ran;Liu Chao;Wei Xiaomin;Wang Jia;Hu Yann
CMOS有源像素传感器（APS）暴露在辐射环境中会产生严重的暗电流退化。针对辐射环境中存在多种高能粒子的普遍情况，提出了一种混合辐射粒子对像素传感器暗电流的估计方法。基于各种粒子的辐射效应，通过概率分析可以预测像素间的暗电流幅值分布。对CMOS APS器件的辐射暗像数据进行了验证，结果表明，预测的暗电流分布与实验数据吻合较好，误差不超过15%。
CMOS active pixel sensors (APS) suffer from serious dark-current degradation when they are exposed in radiation environment. Considering the general situation that there are multiple kinds of energetic particles in radiation environment, a dark-current estimation method for pixel sensors due to mixed radiation particles is proposed in this paper. Based on the radiation effects induced by particles of all kinds, the dark-current amplitudes distribution among the pixels can be predicted through probabilistic analysis. Validation is implemented upon the radiation dark-image data of CMOS APS devices, which shows that the predicted dark-current distribution matches very well with the experimental data, and the difference is no more than 15%.