Resistance switching memories are memristors
Resistance switching memories are memristors
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DOI：
10.1007/s00339-011-6264-9
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发表时间：
2011-03-01
影响因子：
2.7
通讯作者：
Chua, Leon
中科院分区：
文献类型：
--
作者：
Chua, Leon
所有基于电阻切换的2端子非易失性存储器器件都是忆阻器，而不管器件材料和物理操作机制如何。它们都表现出独特的“指纹”，其特征在于被限制在v-i平面的第一和第三象限的收缩磁滞回线，其轮廓形状通常随着任何周期性的“正弦波状”输入电压源或电流源的振幅和频率而变化。特别地，随着频率增加，箍缩磁滞回线收缩并趋于直线。虽然在许多不相关的领域，如生物学、化学、物理学等，已经公布了电压与电流收缩磁滞回线的许多例子，并从许多不相关的现象中观察到，例如气体放电电弧、汞灯、功率转换装置、地震电导变化等，我们将本教程中的示例限制为固态和/或纳米器件，在这些器件中存在大量公开的收缩磁滞回线的示例。特别是，我们从2000年到2010年之间的每一年中随机抽样一个例子，以证明忆阻器是一种不依赖于任何特定材料或物理机制的设备。例如，我们已经表明自旋转移磁性隧道结是忆阻器的示例。本教程的目的是介绍一些基本的电路理论概念和忆阻器的性质，这些概念和性质与非易失性纳米存储器的分析和设计有关，在非易失性纳米存储器中，二进制位存储为忆阻器的连续平衡状态所表现的电阻。简单的教学例子将被用来说明，澄清，并揭开各种误解之间的门外汉。
All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive "fingerprint" characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v-i plane whose contour shape in general changes with both the amplitude and frequency of any periodic "sine-wave-like" input voltage source, or current source. In particular, the pinched hysteresis loop shrinks and tends to a straight line as frequency increases. Though numerous examples of voltage vs. current pinched hysteresis loops have been published in many unrelated fields, such as biology, chemistry, physics, etc., and observed from many unrelated phenomena, such as gas discharge arcs, mercury lamps, power conversion devices, earthquake conductance variations, etc., we restrict our examples in this tutorial to solid-state and/or nano devices where copious examples of published pinched hysteresis loops abound. In particular, we sampled arbitrarily, one example from each year between the years 2000 and 2010, to demonstrate that the memristor is a device that does not depend on any particular material, or physical mechanism. For example, we have shown that spin-transfer magnetic tunnel junctions are examples of memristors. We have also demonstrated that both bipolar and unipolar resistance switching devices are memristors.The goal of this tutorial is to introduce some fundamental circuit-theoretic concepts and properties of the memristor that are relevant to the analysis and design of non-volatile nano memories where binary bits are stored as resistances manifested by the memristor's continuum of equilibrium states. Simple pedagogical examples will be used to illustrate, clarify, and demystify various misconceptions among the uninitiated.