Sputter‐Deposited CdS Films with High Photoconductivity through Film Thickness
Sputter‐Deposited CdS Films with High Photoconductivity through Film Thickness
复制标题
溅射沉积 CdS 薄膜在整个薄膜厚度上具有高光电导率
DOI：
10.1063/1.1661670
复制
发表时间：
1972
影响因子：
3.2
通讯作者：
H. Melchior
中科院分区：
文献类型：
--
作者：
D. B. Fraser;H. Melchior
在二极管系统中使用 Ar-H2S 混合物作为溅射气体溅射沉积了 CdS 光电导薄膜。在保持高于 200°C 的基材上，射频和直流溅射的沉积速率均为约 1 μm/h。当用约 0.5 W/cm2 的钨丝光源照射时，获得了超过 107 Ω cm 的暗电阻率，电阻下降了 5 个数量级。沉积时，CdS 薄膜表现出光电导增益，并且比沉积后激活的薄膜具有更短的衰减时间。在经过适当清洁的基材上具有出色的粘附性，并且器件结构中的薄膜能够承受超过 10−3 的拉伸应变，而不会出现粘附失败。未观察到老化或电极迁移。
Photoconductive films of CdS have been sputter deposited by using mixtures of Ar–H2S as the sputtering gas in a diode system. Both rf and dc sputtering yield deposition rates of about 1 μm/h on substrates maintained above 200°C. Dark resistivities in excess of 107 Ω cm have been obtained with decreases of 5 orders occurring in the resistance when illuminated with a tungsten light source of approximately 0.5 W/cm2. As deposited, the CdS films have displayed photoconductive gain and also have much shorter decay times than films which are activated after deposition. Adherence has been excellent on suitably cleaned substrates and films in device structures have tolerated tensile strains in excess of 10−3 without adherence failure. No aging or electrode migration has been observed.