The Preparation for Cu(Sn) Films of Barrierless Interconnection
The Preparation for Cu(Sn) Films of Barrierless Interconnection
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DOI：
10.4028/www.scientific.net/msf.654-656.1744
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发表时间：
2010-06
期刊：
影响因子：
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通讯作者：
Li Xu;Xiao Na Li;J. Chu;C. Dong
中科院分区：
文献类型：
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作者：
Li Xu;Xiao Na Li;J. Chu;C. Dong
本研究采用磁控共溅射方法制备了不同锡掺杂浓度(0.6-1.4at.%)的铜薄膜。研究了铜(锡)薄膜经退火后的电阻率和微结构。结果表明，在500°C以上热处理后，铜(1.4at.%锡)和铜(1.1at.%锡)薄膜的电阻率都有较大幅度的提高。在60 0℃保温1h后，样品的最小电阻率为3.2μΩ·cm。即使经过700℃的热处理，Cu(0.6at.%Sn.%)薄膜的铜/硅界面仍然很清晰，没有发现任何铜-硅和铜-锡化合物。结果表明，通过严格控制掺杂浓度和锡元素的存在状态(无化合物和析出物的固溶体)，可以获得较低的电阻率和较高的稳定性。
In this study, Cu films doped with different Sn concentrations from 0.6-1.4 at.% were prepared by magnetron co-sputtering. The electrical resistivities and microstructures of Cu (Sn) films after annealings were investigated. The results showed that a sharp increase of the resistivity of Cu (1.4 at.% Sn) and Cu (1.1 at.% Sn) films were found after annealing above at 500°C. The existence of 0.6 at.% Sn in the Cu film is in solid solution state. A minimum electrical resistivity value of ~3.2μΩ•cm was obtained after annealing at 600°C for 1h . Even after a annealing at 700°C, the Cu/Si interface of Cu (0.6 at.% Sn) film still remained sharp without any Cu-Si and Cu-Sn compounds. The results confirmed that the lower resistivity and higher stability of Cu films can be achieved by strictly control of the doping concentrations and the existing state (solid solution without compounds and precipitates) of Sn element.