Photoluminescence of ytterbium-doped porous silicon
Photoluminescence of ytterbium-doped porous silicon
复制标题
掺镱多孔硅的光致发光
DOI：
10.1063/1.114293
复制
发表时间：
1995
影响因子：
4
通讯作者：
T. Ikoma
中科院分区：
文献类型：
--
作者：
T. Kimura;A. Yokoi;Y. Nishida;R. Saito;S. Yugo;T. Ikoma
在室温下观察到Yb掺杂多孔硅层的Yb 3+相关的光致发光，该多孔硅层是通过我们小组开发的用于多孔硅层的Er掺杂的电化学方法制备的。在纯氩气氛中进行高温快速热退火后，样品在1.0 μm附近出现一个尖锐的光致发光带，这是Yb 3+的4f-4f壳内跃迁2F 5/2 → 2F 7/2。由于阳极氧化，硅的能带隙扩大，使得可以利用在主体多孔硅层中产生的光生载流子的复合能量激发Yb 3 + 4f-电子。
Yb3+‐related photoluminescence is observed at room temperature from Yb‐doped porous silicon layers prepared by the electro‐chemical method developed by our group for Er doping of porous silicon layers. After rapid thermal annealing in a pure argon atmosphere at high temperatures (above ∼ 900 °C), samples show a sharp photoluminescence band at around 1.0 μm which is assigned to the intrashell 4f‐4f transitions 2F5/2 → 2F7/2 of Yb3+. The enlarged energy bandgap of silicon as a result of anodization makes possible the excitation of Yb3+ 4f‐electrons with the recombination energy of photocarriers generated in the host porous silicon layers.